PART |
Description |
Maker |
BB565 BB565-02V BB545 |
Silicon Variable Capcitance Diode Varactordiodes - Silicon tuning diode for UHF and VHF TV tuners Varactordiodes - Silicon variable capacitance diode for UHF TV tuners
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
1503 1503J 1503-100A 1503-100B 1503-100C 1503-120B |
Max delay 35 ns, Mechanically variable delay line Max delay 250 ns, Mechanically variable delay line Max delay 150 ns, Mechanically variable delay line Max delay 130 ns, Mechanically variable delay line Max delay 80 ns, Mechanically variable delay line Max delay 60 ns, Mechanically variable delay line Max delay 50 ns, Mechanically variable delay line Max delay 40 ns, Mechanically variable delay line Max delay 30 ns, Mechanically variable delay line Max delay 25 ns, Mechanically variable delay line Max delay 20 ns, Mechanically variable delay line Max delay 200 ns, Mechanically variable delay line Max delay 160 ns, Mechanically variable delay line Max delay 15 ns, Mechanically variable delay line Max delay 140 ns, Mechanically variable delay line Max delay 120 ns, Mechanically variable delay line Max delay 100 ns, Mechanically variable delay line Mechanically variable passive delay line
|
Data Delay Devices Inc
|
MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE High Q Hyperabrupt Tuning Varactors L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
V27D V27BCO V27CCO V27E V27ECCO V27ACO V27EACO V12 |
27 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 72 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 110 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 70 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX 10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX 7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX 17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
MA30W-A MA30W-B MA30-A MA30 MA30-B |
Silicon epitaxial planer type variable resistor SILICON, STABISTOR DIODE
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
MA27V12 |
Silicon epitaxial planar type For VCO UHF BAND, 3.75 pF, 8 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
|